PART |
Description |
Maker |
UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system MOS Field Effect Transistor P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC] NEC Corp.
|
TPCF8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应 N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V. Philips
|
2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开 From old datasheet system N-channel MOS type field effect transistor
|
NEC, Corp. NEC[NEC]
|
UPA1872 UPA1872GR-9JG UPA1872GR-9JG-E1 UPA1872GR-9 |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
TPCS8205 TPC8205 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
UPA1870GR-9JG UPA1870 UPA1870GR-9JG-E1 UPA1870GR-9 |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING TRANSISTOR | MOSFET | HALF BRIDGE | 20V V(BR)DSS | 6A I(D) | SO
|
NEC[NEC]
|
NP80N04PLG NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY NP8 |
MOS FIELD EFFECT TRANSISTOR 80 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
NP80N06NLG NP80N06NLG-S18-AY NP80N06PLG NP80N06PLG |
MOS FIELD EFFECT TRANSISTOR 80 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation Yuasa Battery, Inc.
|